Light-emission potential of Si-based nanostructures from calculated absorption coefficient

被引：0
|
作者：
Ghosh, S [1 ]
Basu, PK [1 ]
机构：
[1] Univ Calcutta, Dept Radio Phys & Elect, Kolkata 700009, W Bengal, India
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2001年 / 30卷 / 05期
关键词：
light emission; absorption coefficient; quantum wells; quantum dots; Si alloys;
D O I：
10.1002/mop.1312
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The values of the absorption coefficient in coupled Si/SiGe and Si/SiGeC nanostructures are calculated for quasidirect no-phonon transition due to the momentum spread of electrons spatially, confined in ultrathin layers. The values in quantum dots are found to be as large as that in bulk GaAs. (C) 2001 John Wiley & Sons, Inc.
引用
收藏
页码：352 / 355
页数：4
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