Radiative recombination spectra of heavily p-type δ-doped GaAs/AlAs MQWS

被引：1

作者：

Kundrotas, J. ^{[1
,2
]}

Cerskus, A. ^{[1
]}

Valusis, G. ^{[1
]}

Lachab, M. ^{[3
]}

Khanna, S. P. ^{[3
]}

Harrison, P. ^{[3
]}

Linfield, E. H. ^{[3
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] Gediminas Tech Univ Vilnius, LT-10223 Vilnius, Lithuania

[3] Univ Leeds, Inst Microwave & Photon, Leeds LS2 9JT, W Yorkshire, England

来源：

ACTA PHYSICA POLONICA A | 2008年 / 113卷 / 03期

关键词：

D O I：

10.12693/APhysPolA.113.963

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a study of the photoluminescence properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulater transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is approximate to 3 x 10(12) cm(-2).

引用

页码：963 / 966

页数：4

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