Impact of strain on the design of low-power high-speed circuits

被引：4

作者：

Ramakrishnan, H. ^{[1
]}

Maharatna, K. ^{[2
]}

Chattopadhyay, S. ^{[1
]}

Yakovlev, A. ^{[1
]}

机构：

[1] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[2] Univ Southampton, Sch Elect & Comp Engn, Southampton SO17 1BJ, Hants, England

来源：

2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11 | 2007年

关键词：

D O I：

10.1109/ISCAS.2007.378254

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

In this article, we explore the impact of strain on circuit performance when strained silicon (s-Si) devices are used for designing low-power high-speed circuits. Emphasis has been given on the evaluation of noise characteristics and low-power performance along with the delay characteristics under different channel straining conditions. An inverter circuit has been used for performance evaluation through simulation where the device simulator is calibrated with experimental device data. The result shows a great promise for s-Si technology in digital applications which require high throughput and low power.

引用

页码：1153 / +

页数：2

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