Design of highly efficient, high output power, L-band class D-1 RF power amplifiers using GaN MESFET devices

被引：7

作者：

Gustavsson, Ulf ^{[1
,2
]}

Lejon, Thomas ^{[1
]}

Fager, Christian ^{[2
]}

Zirath, Herbert ^{[2
]}

机构：

[1] Ericsson Telecom AB, SE-16480 Stockholm, Sweden

[2] Chalmers, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

来源：

2007 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4 | 2007年

关键词：

D O I：

10.1109/EUMC.2007.4405387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, two class D-1 amplifiers is presented, both implemented with GaN MESFETs and working around 900 MHz, delivering 20.7/51.1 W output power with 75/78 % peak drain-efficiency. A simple nonlinear model optimized for switched mode operation is developed from basic device data, and is used to predict intrinsic current and voltage waveforms during the design process. In general, very good agreement between modeled and simulated data is obtained considering the limited amount of parasitic parameters covered by the device model.

引用

页码：1089 / +

页数：2

共 36 条

[1] Design of highly efficient, high output power, L-band class D-1 RF power amplifiers using GaN MESFET devices
Gustavsson, Ulf
Lejon, Thomas
Fager, Christian
Zirath, Herbert
2007 EUROPEAN CONFERENCE ON WIRELESS TECHNOLOGIES, 2007, : 308 - +
[2] Design of highly efficient, high output power, L-band class D-1 RF power amplifiers using GaN MESFET devices
Gustavsson, Ulf
Lejon, Thomas
Fager, Christian
Zirath, Herbert
2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 133 - +
[3] Study and Design of High Efficiency Switch Mode GaN Power Amplifiers at L-band Frequency
Ramadan, A.
Martin, A.
Sardin, D.
Reveyrand, T.
Nebus, J-M.
Bouysse, P.
Lapierre, L.
Villemazet, J. F.
Forestier, S.
2009 INTERNATIONAL CONFERENCE ON ADVANCES IN COMPUTATIONAL TOOLS FOR ENGINEERING APPLICATIONS, 2009, : 117 - +
[4] Broadband AlGaN/GaN High Power Amplifiers, Robust LNAs, and Power Switches in L-Band
Piotrowicz, S.
Mallet-Guy, B.
Chartier, E.
Jacquet, J. C.
Jardel, O.
Lancereau, D.
Le Coustre, G.
Morvan, E.
Aubry, R.
Dua, C.
Oualli, M.
Richard, M.
Sarazin, N.
diForte-Poisson, M. A.
Delaire, J.
Mancuso, Y.
Delage, S. L.
2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2009, : 1784 - +
[5] Broadband AlGaN/GaN High Power Amplifiers, Robust LNAs, and Power Switches in L-Band
Piotrowicz, S.
Mallet-Guy, B.
Chartier, E.
Jacquet, J. C.
Jardel, O.
Lancereau, D.
Le Coustre, G.
Morvan, E.
Aubry, R.
Dua, C.
Oualli, M.
Richard, M.
Sarazin, N.
diForte-Poisson, M. A.
Delaire, J.
Mancuso, Y.
Delage, S. L.
2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), 2009, : 431 - +
[6] High Performance GaN HEMT Class-AB RF Power Amplifier for L-Band Applications
Hayat, K.
Kashif, A.
Azam, S.
Mehmood, T.
Imran, M.
2013 10TH INTERNATIONAL BHURBAN CONFERENCE ON APPLIED SCIENCES AND TECHNOLOGY (IBCAST), 2013, : 389 - 392
[7] A GaN High Power and Efficient Amplifier for L-Band Galileo System
Giofre, Rocco
Colantonio, Paolo
Giannini, Franco
Gonzalez, Laura
de Arriba, Francisco
Cabria, Lorena
Baglieri, Didier
2015 INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS WORKSHOP (INMMIC), 2015,
[8] Class E and Class D-1 GaN HEMT Switched-Mode Power Amplifiers
Garcia, J. A.
Merlin, R.
Fernandez, M.
Bedia, B.
Cabria, L.
Marante, R.
Martin-Guerrero, T. M.
SMO 08: PROCEEDINGS OF THE 8TH WSEAS INTERNATIONAL CONFERENCE ON SIMULATION, MODELLING AND OPTIMIZATION, 2008, : 370 - +
[9] InAlN/GaN HEMTs based L-band high-power packaged amplifiers
Jardel, Olivier
Jacquet, Jean-Claude
Baczkowski, Leny
Carisetti, Dominique
Lancereau, Didier
Olivier, Maxime
Aubry, Raphael
Poisson, Marie-Antoinette di Forte
Dua, Christian
Piotrowicz, Stephane
Delage, Sylvain L.
INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2014, 6 (06) : 565 - 572
[10] High efficiency L-band variable output power amplifiers for use in communication systems
Bouthillette, S
Platzker, A
1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 563 - 566

← 1 2 3 4 →