Three-dimensional heating model of inductively coupled plasma with rectangular geometry

被引：6
|
作者：
Song, SB
Yoon, NS
机构：
[1] Samsung SDI Co Ltd, Corp R&D Ctr, Yongin 449902, Gyeonggi Do, South Korea
[2] Chungbuk Natl Univ, Sch Elect Engn, Chungbuk 361763, South Korea
来源：
SURFACE & COATINGS TECHNOLOGY | 2003年 / 171卷 / 1-3期
关键词：
plasma processing; heating model inductively coupled plasma; rectangular chamber;
D O I：
10.1016/S0257-8972(03)00267-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A three-dimensional heating model of inductively coupled plasma sources with the rectangular geometry is developed. The electromagnetic field is decomposed into Fourier modes, and the mode excitation by the source current is determined based on the uniqueness theorem of wave equation. With the calculated fields, we have evaluated the expression for the plasma resistance as a function of plasma parameters and geometrical parameters. (C) 2003 Elsevier Science B.V. All rights reserved.
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页码：183 / 186
页数：4
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