Investigation of the defect density in ultra-thin Al2O3 films grown using atomic layer deposition

被引：48

作者：

Zhang, Yadong ^{[1
]}

Seghete, Dragos ^{[2
]}

Abdulagatov, Aziz ^{[2
]}

Gibbs, Zachary ^{[3
]}

Cavanagh, Andrew ^{[4
]}

Yang, Ronggui ^{[1
]}

George, Steven ^{[2
,3
]}

Lee, Yung-Cheng ^{[1
]}

机构：

[1] Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA

[2] Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA

[3] Univ Colorado, Dept Chem & Biol Engn, Boulder, CO 80309 USA

[4] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

来源：

SURFACE & COATINGS TECHNOLOGY | 2011年 / 205卷 / 10期

关键词：

Defect; Ultra-thin Al2O3; Atomic layer deposition; Buffer layer; Nucleation; Electroplating; GAS-DIFFUSION BARRIERS; SURFACE-CHEMISTRY; ALUMINUM-OXIDE; ENCAPSULATION; NANOTUBES; THICKNESS; SILICON;

D O I：

10.1016/j.surfcoat.2010.12.001

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The film perfection in terms of pinhole defect densities of ultra-thin Al2O3 grown by atomic layer deposition (ALD) has been quantitatively characterized. A significant defect density reduction from similar to 1.2 x 10(5)/cm(2) to similar to 90/cm(2) was demonstrated for 2 nm-thick Al2O3 by using an AID tungsten (W) buffer layer on the nickel (Ni) substrate. The reason for the defect reduction was attributed to efficient nucleation of ALD Al2O3 on ALD W. The effect of the buffer layer becomes less essential as the Al2O3 thickness increases, where the substrate surface physical conditions such as particle contamination become the main cause for defects. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3334 / 3339

页数：6

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