Measurements of time domain voltage/current waveforms at RF and microwave frequencies for the characterization of nonlinear devices

被引：0
|
作者：
Barataud, D [1 ]
Mallet, A [1 ]
Campovecchio, M [1 ]
Nebus, JM [1 ]
Villotte, JP [1 ]
Verspecht, J [1 ]
机构：
[1] IRCOM, Fac Sci, UMR 6615, F-87060 Limoges, France
来源：
WHERE INSTRUMENTATION IS GOING - CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 1998年
关键词：
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A novel time domain large signal characterization of microwave transistors ir described An harmonic load-pull system, based on the use of three separated active loops, allows synthesizing the load impedances of the device under test at he first three harmonic frequencies The visualization and he accurate measurement of high frequency current/voltage at low, medium and large RF power levels, is performed by coupling these harmonic load-pull facilities with a "nonlinear network measurement system". GaAs FETs and GaInP/GaAs HBTs have been characterized and optimized under single tone and multitone large signal excitations: A comparison between measured and simulated current/voltage waveforms is also presented Such results prove the great capabilities offered by this new time domain characterization approach to aid in designing optimized power amplifiers and in validating nonlinear models for CAD.
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页码：1006 / 1010
页数：5
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