Correlation between the bulk modulus and the transition pressure in semiconductors

被引：30
|
作者：
Al-Douri, Y [1 ]
Abid, H
Aourag, H
机构：
[1] Natl Univ Singapore, Fac Sci, Dept Phys, Singapore 119260, Singapore
[2] Univ Sidi Bel Abbes, Appl Mat Lab, Sidi Bel Abbes 22000, Algeria
[3] Univ Technol Belfort Montbeliard, LERMPS, F-90010 Belfort, France
来源：
MATERIALS LETTERS | 2005年 / 59卷 / 16期
关键词：
bulk modulus; transition pressure; semiconductor;
D O I：
10.1016/j.matlet.2005.02.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The transition pressure from zinc blende to β-Sn structure is used to calculate the bulk modulus which gave reasonable results and agreement to that of experimental and other authors' results. © 2005 Elsevier B.V. All rights reserved.
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页码：2032 / 2034
页数：3
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