Fully-Coupled Electrothermal Simulation of Wide-Area Reverse Conducting IGBTs

被引：0
|
作者：
Riccio, Michele [1 ]
Borghese, Alessandro [1 ]
Maresca, Luca [1 ]
Breglio, Giovanni [1 ]
Irace, Andrea [1 ]
机构：
[1] Univ Naples Federico II, Dept Elect Engn & Informat Technol, Naples, Italy
来源：
2019 25TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC 2019) | 2019年
关键词：
POWER DEVICES;
D O I：
暂无
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Reverse Conducting IGBTs (RC-IGBTs) represent a valuable solution to increase power density in IGBT modules, to reduce packaging, bonding, and silicon costs in fabrication. However, the increased power density and the presence of a monolithically integrated PiN diode, entail careful evaluation of thermal issues to guarantee device reliability. In this work, a fast, yet accurate, compact electrothermal (ET) simulator for wide-area RC-IGBTs is proposed. The simulator is implemented in ELDO environment. A 3-D finite-difference time-domain method for heat equation solution and a temperature dependent SPICE model of RC-IGBT are jointly used for fast ET simulations of the device. Three different device layouts are considered and simulated during normal and harsh working conditions. Finally, the simulator is used to evaluate the temperature distribution within the device during its operation in a typical circuit application.
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页数：4
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