Rapid thermal annealing of ITO films

被引：104
|
作者：
Song, Shumei [1 ]
Yang, Tianlin [1 ]
Liu, Jingjing [1 ]
Xin, Yanqing [1 ]
Li, Yanhui [1 ]
Han, Shenghao [1 ,2 ]
机构：
[1] Shandong Univ Weihai, Sch Space Sci & Phys, Weihai 264209, Shandong, Peoples R China
[2] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 16期
关键词：
ITO film; Rapid thermal annealing; Resistivity; Transmittance; INDIUM-TIN-OXIDE; THIN-FILMS; OPTICAL-PROPERTIES; HEAT-TREATMENT; EVAPORATION; DEPOSITION;
D O I：
10.1016/j.apsusc.2011.03.009
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Tin-doped indium oxide (ITO) films with 200nm thickness were deposited on glass substrates by DC magnetron sputtering at room temperature. And they were annealed by rapid thermal annealing (RTA) method in vacuum ambient at different temperature for 60 s. The effect of annealing temperature on the structural, electrical and optical properties of ITO films was investigated. As the RTA temperature increases, the resistivity of ITO films decreases dramatically, and the transmittance in the visible region increases obviously. The ITO film annealed at 600 degrees C by RTA in vacuum shows a resistivity of 1.6 x 10(-4) Omega cm and a transmittance of 92%. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：7061 / 7064
页数：4
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