The pseudo-two-dimensional approach to model the drain section in SOI MOSFETs

被引：0
|
作者：
Hammad, MY
Schroder, DK
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Low Power Elect, Tempe, AZ 85287 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 02期
基金：
美国国家科学基金会;
关键词：
drain section; pseudo-2-D; SOI MOSFET model;
D O I：
10.1109/16.902742
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The pseudo-two-dimensional (2-D) approach is extended from traditional bulk-Si devices to silicon-on-insulator (SOI) ones. All the possible scenarios associated with partially- and fully-depleted devices are included in the analysis. The benefits of the pseudo-2-D approach in saturation-region modeling are briefly discussed.
引用
收藏
页码：386 / 387
页数：2
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