1.54 mu m electroluminescence from erbium doped gallium phosphide diodes

被引：3
|
作者：
Ford, GM [1 ]
Wessels, BW [1 ]
机构：
[1] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60208
来源：
RARE EARTH DOPED SEMICONDUCTORS II | 1996年 / 422卷
关键词：
D O I：
10.1557/PROC-422-345
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：345 / 350
页数：6
相关论文
共 50 条
  • [21] Room temperature 1.54 mu m light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy
    Du, CX
    Ni, WX
    Joelsson, KB
    Hansson, GV
    APPLIED PHYSICS LETTERS, 1997, 71 (08) : 1023 - 1025
  • [22] ROOM-TEMPERATURE SHARP LINE ELECTROLUMINESCENCE AT LAMBDA=1.54-MU-M FROM AN ERBIUM-DOPED, SILICON LIGHT-EMITTING DIODE
    ZHENG, B
    MICHEL, J
    REN, FYG
    KIMERLING, LC
    JACOBSON, DC
    POATE, JM
    APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2842 - 2844
  • [23] 1.54-MU-M ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED GAAS AND GAAIAS GROWN BY MOLECULAR-BEAM EPITAXY
    GALTIER, P
    POCHOLLE, JP
    CHARASSE, MN
    DECREMOUX, B
    HIRTZ, JP
    GROUSSIN, B
    BENYATTOU, T
    GUILLOT, G
    APPLIED PHYSICS LETTERS, 1989, 55 (20) : 2105 - 2107
  • [24] Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes
    Franzo, Giorgia
    Coffa, Salvatore
    Priolo, Francesco
    Spinella, Corrado
    Journal of Applied Physics, 1997, 81 (06):
  • [25] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GALLIUM PHOSPHIDE DOPED WITH ZINC AND BORON
    BASETSKII, VY
    GORYUNOV.NA
    PESKOV, OG
    KHOLUYAN.GF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 856 - +
  • [26] ERBIUM-DOPED GAAS LIGHT-EMITTING DIODE AT 1.54 MU-M
    ROLLAND, A
    LECORRE, A
    FAVENNEC, PN
    GAUNEAU, M
    LAMBERT, B
    LECROSNIER, D
    LHARIDON, H
    MOUTONNET, D
    ROCHAIX, C
    ELECTRONICS LETTERS, 1988, 24 (15) : 956 - 958
  • [27] IMPACT EXCITATION OF THE ERBIUM-RELATED 1.54 MU-M LUMINESCENCE PEAK IN ERBIUM-DOPED INP
    ISSHIKI, H
    KOBAYASHI, H
    YUGO, S
    KIMURA, T
    IKOMA, T
    APPLIED PHYSICS LETTERS, 1991, 58 (05) : 484 - 486
  • [28] 1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes
    Curry, RJ
    Gillin, WP
    APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1380 - 1382
  • [29] 1.54 MU-M ELECTROLUMINESCENCE BY ELECTRON-IMPACT EXCITATION OF ER ATOMS DOPED IN INP
    ISSHIKI, H
    KOBAYASHI, H
    YUGO, S
    KIMURA, T
    IKOMA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2B): : L225 - L227
  • [30] 1.54 MU-M ELECTROLUMINESCENCE IN MEV ION-IMPLANTED ER-DOPED GAAS
    KLEIN, PB
    MOORE, FG
    DIETRICH, HB
    ELECTRONICS LETTERS, 1990, 26 (16) : 1299 - 1300
12345