1.54 mu m electroluminescence from erbium doped gallium phosphide diodes

被引：3
|
作者：
Ford, GM [1 ]
Wessels, BW [1 ]
机构：
[1] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60208
来源：
RARE EARTH DOPED SEMICONDUCTORS II | 1996年 / 422卷
关键词：
D O I：
10.1557/PROC-422-345
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：345 / 350
页数：6
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