Worst-case design and margin for embedded SRAM

被引：0
|
作者：
Aitken, Robert [1 ]
Idgunji, Sachin [1 ]
机构：
[1] ARM, Sunnyvale, CA USA
来源：
2007 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION, VOLS 1-3 | 2007年
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
An important aspect of Design for Yield for embedded SRAM is identifying the expected worst case behavior in order to guarantee that sufficient design margin is present. Previously, this has involved multiple simulation corners and extreme test conditions. It is shown that statistical concerns and device variability now require a different approach, based on work it? Extreme Value Theory. This method is used to develop a lower-bound for variability-related yield in memories.
引用
收藏
页码：1289 / 1294
页数：6
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