Enhanced sheath heating in capacitively coupled discharges due to non-sinusoidal voltage waveforms

被引:83
|
作者
Lafleur, T.
Boswell, R. W. [1 ]
Booth, J. P. [2 ]
机构
[1] Australian Natl Univ, Space Plasma Power & Prop Grp, Res Sch Phys & Engn, Canberra, ACT 0200, Australia
[2] Ecole Polytech, LPP, CNRS, F-91128 Palaiseau, France
关键词
D O I
10.1063/1.4712128
中图分类号
O59 [应用物理学];
学科分类号
摘要
Through the use of particle-in-cell simulations, we demonstrate that the power deposition in capacitively coupled discharges (in argon) can be increased by replacing sinusoidal waveforms with Gaussian-shaped voltage pulses (with a repetition frequency of 13.56 MHz). By changing the Gaussian pulse width, electron heating can be directly controlled, allowing for an increased plasma density and ion flux for the same gas pressure and geometrical operating conditions. Analysis of the power deposition profiles and electron distribution functions shows that enhanced electron-sheath heating is responsible for the increased power absorption. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712128]
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页数:4
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