Pyrolysis of two-dimensional and three-dimensional interferometrically patterned resist structures

被引:0
|
作者
Burckel, D. B. [1 ]
Washburn, C. M. [1 ]
Koleske, D. D. [1 ]
Polsky, R. [1 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源
关键词
CARBON; FABRICATION;
D O I
10.1116/1.3495756
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Interferometric lithography was used to create a wide variety of two-dimensional and three-dimensional patterns in standard photoresist. The patterns were then converted to amorphous carbon structures through pyrolysis in a reducing atmosphere. The structures maintain their fundamental in-plane morphology despite undergoing significant shrinkage. As an indication of their functionality, the authors highlight their use in two diverse applications: (1) as a defect reduction mask in metal-organic chemical vapor deposition growth of gallium nitride (GaN) on sapphire and (2) as a nanoparticle decorated electrode for catalytic oxidation of methanol. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3495756]
引用
收藏
页码:C6P14 / C6P17
页数:4
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