High-temperature bulk acoustic wave sensors

被引:78
|
作者
Fritze, Holger [1 ]
机构
[1] Tech Univ Clausthal, Inst Energy Res & Phys Technol, D-38640 Goslar, Germany
关键词
resonance spectra; impedance; high-temperature properties; network analysis; langasite resonators; high-temperature sensors; resonant sensors; QUARTZ-CRYSTAL MICROBALANCE; ELECTROMECHANICAL PROPERTIES; PIEZOELECTRIC MATERIALS; GALLIUM ORTHOPHOSPHATE; HYDROTHERMAL GROWTH; DEFECT CHEMISTRY; SINGLE-CRYSTALS; DOMAIN-WALLS; X-RAY; LANGASITE;
D O I
10.1088/0957-0233/22/1/012002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Piezoelectric crystals like langasite (La3Ga5SiO14, LGS) and gallium orthophosphate (GaPO4) exhibit piezoelectrically excited bulk acoustic waves at temperatures of up to at least 1450 degrees C and 900 degrees C, respectively. Consequently, resonant sensors based on those materials enable new sensing approaches. Thereby, resonant high-temperature microbalances are of particular interest. They correlate very small mass changes during film deposition onto resonators or gas composition-dependent stoichiometry changes of thin films already deposited onto the resonators with the resonance frequency shift of such devices. Consequently, the objective of the work is to review the high-temperature properties, the operation limits and the measurement principles of such resonators. The electromechanical properties of high-temperature bulk acoustic wave resonators such as mechanical stiffness, piezoelectric and dielectric constant, effective viscosity and electrical conductivity are described using a one-dimensional physical model and determined accurately up to temperatures as close as possible to their ultimate limit. Insights from defect chemical models are correlated with the electromechanical properties of the resonators. Thereby, crucial properties for stable operation as a sensor under harsh conditions are identified to be the formation of oxygen vacancies and the bulk conductivity. Operation limits concerning temperature, oxygen partial pressure and water vapor pressure are given. Further, application-relevant aspects such as temperature coefficients, temperature compensation and mass sensitivity are evaluated. In addition, approximations are introduced which make the exact model handy for routine data evaluation. An equivalent electrical circuit for high-temperature resonator devices is derived based on the one-dimensional physical model. Low-and high-temperature approximations are introduced. Thereby, the structure of the equivalent circuit corresponds to the Butterworth-van Dyke equivalent circuit extended by a finite bulk resistance. Assignments of the lumped elements to the physical properties are given. Finally, an application example demonstrates the capabilities of high-temperature stable piezoelectric resonators. The simultaneous determination of mechanical and electrical properties of thin sensor films by resonant sensors enables the detection of CO in hydrogen-containing atmospheres.
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页数:28
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