Room-temperature dephasing time of intersubband transitions in heavily-doped InGaAs/AlAs/AlAsSb coupled quantum wells

被引：4

作者：

Gopal, AV ^{[1
]}

Yoshida, H ^{[1
]}

Simoyama, T ^{[1
]}

Kasai, J ^{[1
]}

Mozume, T ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 09期

关键词：

D O I：

10.1063/1.1606500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature dephasing time (T-2) estimates of 1.55 mum intersubband transitions (ISBT) are presented in InGaAs/AlAs/AlAsSb coupled double quantum wells. In this material, optimized for ISBT at communication wavelengths for all-optic switching application, we also studied the doping-density dependence of the four-wave-mixing decay time as a function of incident excitation intensity. A T-2 value of about 292+/-40 fs is estimated at an intensity corresponding to the saturation intensity in samples that are doped to 2x10(19) cm(-3). This value is in good agreement with the value estimated from earlier calculations. (C) 2003 American Institute of Physics.

引用

页码：1854 / 1856

页数：3

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