High-transparency Ni/Au Ohmic contact to p-type GaN

被引：0

作者：

Sheu, JK ^{[1
]}

Su, YK ^{[1
]}

Chi, GC ^{[1
]}

Jou, MJ ^{[1
]}

Chang, CM ^{[1
]}

Liu, CC ^{[1
]}

Hung, WC ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

BLUE LASER AND LIGHT EMITTING DIODES II | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tu this study, a very thin Ni / Au bi-layer metal film was prepared by electron beam evaporation and thermal alloying to form Ohmic contact on p-type GaN film. After thermal alloying, the current-voltage (I - V) characteristic of Ni / Au contact on p-type GaN film exhibited Ohmic behavior. The Ni / Au contacts showed a specific contact resistance of 1.7x10(-2) Omega-cm(2) at an alloying temperature of 450 degrees C. In addition, the light transmittance of the Ni / Au (2 nm/ 6 nm) bi-layer on p-type GaN was measured to be around 85% at 470 nm light wavelength. These results suggest that a suitable metallization technology for the fabrication of light emitting devices can be achieved.

引用

页码：638 / 641

页数：4

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