Structural and Photoluminescence Properties of Ta: In2O3 Thin Films Grown by Pulsed Laser Deposition Technique

High purity Tantalum oxide and indium oxide powders are taken as starting materials to prepare Tantalum doped Indium oxide powder by solid state reaction method to prepare robust targets of (In1-xTax)(2)O-3 (x=0.06) for Pulsed Laser Deposition (PLD) to grow Ta:In2O3 Thin films, prepared pellet was sintered at 1000 degrees C for 12hours. The films are deposited on ultrasonically cleaned (100) oriented Silica substrates are maintained at a substrate temperature of 400 degrees C. The vacuum chamber evacuated by a turbo molecular pump to a base vacuum better than 10(-6) Torr and oxygen partial pressure was maintained at 0.3 mTorr. The deposited film structural characterization was done by GIXRD, EDX and stylus profile meter. UV-vis spectroscopy and Photoluminescence spectroscopy studies are performed for optical properties of the deposited films. GIXRD suggest polycrystalline nature with the preferred orientation along (222) direction. TEM images of the deposited films show nanometric grained rod like morphology. CIE plots confirm that deposited films are applicable for blue LED.