Structural and photoluminescence properties of single-crystalline In2O3 films grown by metal organic vapor deposition

被引：33
|
作者：
Yang, Fan [1 ]
Ma, Jin [1 ]
Feng, Xianjin [1 ]
Kong, Lingyi [1 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 18期
基金：
中国国家自然科学基金;
关键词：
crystal structure; X-ray diffraction; metal-organic chemical vapor deposition; oxides;
D O I：
10.1016/j.jcrysgro.2008.06.075
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Single-crystalline In2O3 thin films were obtained on alpha-Al2O3 (0 0 0 1) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The structural, optical and photoluminescence (PL) properties of the In2O3 films were investigated in detail. The sample prepared at 650 degrees C exhibited best crystal quality with body-centered cubic (bcc) structure of pure In2O3. The average transmittance for the films in the visible spectral range exceeded 85%. A single and sharp ultra-violet PL peak near 337 nm was observed at room temperature (RT). The corresponding PL mechanisms were investigated. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：4054 / 4057
页数：4
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