Electronic and structural properties of the n-GaAs:: Si as-grown, α-particle irradiated and annealed

被引：1
|
作者：
Kunert, HW [1 ]
机构：
[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 181卷
关键词：
irradiation; n-GaAs; photoluminescence and Raman spectroscopy;
D O I：
10.1016/S0168-583X(01)00368-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The effect of the alpha -particle irradiation and annealing on the electronic properties and the LO and transverse optical (TO) phonons of the n-type GaAs, Si doped (10(19) cm(-3)) was investigated by means of low-temperature photoluminescence (LTPL) and backscattering Raman spectroscopy. Irradiation shifts the Si-impurity photoluminescence (PL) band from 1.5176 up to 1.53 eV and annealing shifts the 1.53 eV band to 1.49 eV. The alpha -particle irradiation enhances the LO mode. The irradiated LO phonon strength is also calculated. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：293 / 297
页数：5
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