Optical loss in strained quantum-well semiconductor ridge lasers

被引：1
|
作者：
Bogatov, AP
Boltasyova, AE
Drakin, AE
Konyaev, VP
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia
[2] Moscow Physicotech Inst, Dolgoprudnyi 141700, Moscow Oblast, Russia
[3] Polyus Res Inst, Fed State Enterprise, Moscow 117342, Russia
来源：
QUANTUM ELECTRONICS | 2000年 / 30卷 / 10期
关键词：
D O I：
10.1070/QE2000v030n10ABEH001826
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of measurements of optical loss in semiconductor ridge lasers are presented. The InGaAs/AlGaAs/GaAs single-quantum-well semiconductor lasers are studied in the spectral range from 1019 to 1042 nm, which corresponds to the long-wavelength wing of the mode gain curve. It is shown that the dominant mechanism of optical loss appears to be light scattering by optical inhomogeneities of the laser waveguide, while the free-carrier absorption is negligible in the lasers studied.
引用
收藏
页码：878 / 880
页数：3
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