Optical gain of strained hexagonal and cubic GaN quantum-well lasers

被引:15
|
作者
Ahn, D [1 ]
Park, SH [1 ]
机构
[1] CATHOLIC UNIV TAEGU HYOSUNG, DEPT PHYS, KYEONGBUK 713702, SOUTH KOREA
关键词
D O I
10.1063/1.117287
中图分类号
O59 [应用物理学];
学科分类号
摘要
In order to estimate and compare the would-be performances of both hexagonal and cubic GaN quantum-well lasers, the optical gains of strained-layer hexagonal and cubic GaN quantum wells are studied theoretically taking into account non-Markovian relaxation. The 6x6 multiband effective-mass Hamiltonians are used to calculate the band structures of both hexagonal-and cubic-quantum wells. As a numerical example, the optical gains of strained cubic and hexagonal quantum wells with various well widths are calculated. It is expected that the optical gains of the cubic-phase quantum well are larger in magnitudes than those of the hexagonal GaN quantum well over the wide range of carrier densities due to the heavier effective mass of the HH1 band of the latter at the zone center. (C) 1996 American Institute of Physics.
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页码:3303 / 3305
页数:3
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