A temperature-compensated ZnO-on-diamond resonant mass sensor

被引:0
|
作者
Abdolvand, Reza [1 ]
Hao, Zhili [1 ]
Ayazi, Farrokh [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
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中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
This paper reports on the fabrication and measurement of ZnO-on-diamond length-extensional resonant mass sensors. Improved mass sensitivity due to the higher frequency of operation as well as lower motional impedance compared to capacitively-transduced sensors of the same type is demonstrated. Measured mass sensitivity of similar to 1kHz/pg is shown at similar to 39MHz operation frequency. Moreover, a small temperature coefficient of frequency (TCF) of -6ppm/degrees C is achieved by incorporating a layer of silicon dioxide in the resonator structure.
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页码:1297 / +
页数:2
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