Phase-Change Memories on a Diet

被引：130
|
作者：
Salinga, Martin [1 ]
Wuttig, Matthias
机构：
[1] Rhein Westfal TH Aachen, D-52056 Aachen, Germany
来源：
SCIENCE | 2011年 / 332卷 / 6029期
关键词：
D O I：
10.1126/science.1204093
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：543 / 544
页数：2
相关论文
共 50 条
  • [41] Design of bifunctional phase-change device for storage memories and reconfigurable metasurfaces
    Lian, Xiaojuan
    Gao, Zhixuan
    Wan, Xiang
    Ren, Qingying
    Liu, Xiaoyan
    Wang, Lei
    [J]. CERAMICS INTERNATIONAL, 2023, 49 (05) : 7785 - 7795
  • [42] DISSIPATION IN PHASE-CHANGE SURFUSION IRREVERSIBLE PHASE-CHANGE
    FREMOND, M
    VISINTIN, A
    [J]. COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II, 1985, 301 (18): : 1265 - 1268
  • [43] Experimental Analysis of Partial-SET State Stability in Phase-Change Memories
    Braga, Stefania
    Cabrini, Alessandro
    Torelli, Guido
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (02) : 517 - 522
  • [44] Density-functional theory guided advances in phase-change materials and memories
    Zhang, Wei
    Deringer, Volker L.
    Dronskowski, Richard
    Mazzarello, Riccardo
    Ma, Evan
    Wuttig, Matthias
    [J]. MRS BULLETIN, 2015, 40 (10) : 856 - 869
  • [45] Master-equation approach to understanding multistate phase-change memories and processors
    Wright, C. David
    Blyuss, Konstantin
    Ashwin, Peter
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (06)
  • [46] Heavy-Ion Induced Single Event Upsets in Phase-Change Memories
    Gerardin, S.
    Bagatin, M.
    Paccagnella, A.
    Visconti, A.
    Bonanomi, M.
    Beltrami, S.
    Frost, C.
    Ferlet-Cavrois, V.
    [J]. 2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [47] SET and RESET pulse characterization in BJT-selected phase-change memories
    Bedeschi, F
    Bonizzoni, E
    Casagrande, G
    Gastaldi, R
    Resta, C
    Torelli, G
    Zella, D
    [J]. 2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS, 2005, : 1270 - 1273
  • [48] N-doped GeTe as Performance Booster for Embedded Phase-Change Memories
    Fantini, A.
    Sousa, V.
    Perniola, L.
    Gourvest, E.
    Bastien, J. C.
    Maitrejean, S.
    Braga, S.
    Pashkov, N.
    Bastard, A.
    Hyot, B.
    Roule, A.
    Persico, A.
    Feldis, H.
    Jahan, C.
    Nodin, J. F.
    Blachier, D.
    Toffoli, A.
    Reimbold, G.
    Fillot, F.
    Pierre, F.
    Annunziata, R.
    Benshael, D.
    Mazoyer, P.
    Vallee, C.
    Billon, T.
    Hazart, J.
    De Salvo, B.
    Boulanger, F.
    [J]. 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010,
  • [49] Thermal stability and electrical resistivity of SiTaNx heating layer for phase-change memories
    Cheng, Huai-Yu
    Chen, Yi- Chen
    Lee, Chain-Ming
    Chung, Ren-Jei
    Chin, Tsung-Shune
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (07) : G685 - G691
  • [50] The Design of Rewritable Ultrahigh Density Scanning-Probe Phase-Change Memories
    Wright, C. David
    Wang, Lei
    Shah, Purav
    Aziz, Mustafa M.
    Varesi, Enrico
    Bez, Roberto
    Moroni, Maurizio
    Cazzaniga, Francesco
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 10 (04) : 900 - 912
12345