Low resistance as-deposited Cr/Au contacts on p-type GaN

被引：15
|
作者：
Kalaitzakis, F. G. [1 ]
Pelekanos, N. T. [1 ]
Prystawko, P. [3 ]
Leszczynski, M. [3 ]
Konstantinidis, G. [2 ]
机构：
[1] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Greece
[2] FORTH IESL, Microelect Res Grp, Iraklion 71110, Greece
[3] Top GaN Ltd, PL-01142 Warsaw, Poland
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 26期
关键词：
D O I：
10.1063/1.2828044
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of several predeposition surface treatments and different contact metals to the electrical properties of metal/p-GaN contacts was studied. A low resistance as-deposited Cr/Au Ohmic contact was achieved, using boiling aqua regia as surface treatment. The Ohmic resistance of Cr/Au contacts with 50 mu m interspacing was found to be 50 Omega, while the specific contact resistivity value was measured 2.6x10(-3) Omega cm(2). Direct comparison with the standard oxidized Ni/Au contacts confirmed the superior characteristics of the Cr/Au contact scheme. Violet emission was readily obtained when the as-deposited Cr/Au contacts were used as the p electrode of a light emitting diode emitting at 385 nm.
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页数：3
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