Ferroelectric transition in an epitaxial barium titanate thin film: Raman spectroscopy and x-ray diffraction study

被引:134
|
作者
El Marssi, M
Le Marrec, F
Lukyanchuk, IA
Karkut, MG
机构
[1] Univ Picardie, Phys Mat Condensee Lab, F-80039 Amiens, France
[2] LD Landau Theoret Phys Inst, Moscow, Russia
关键词
D O I
10.1063/1.1596720
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have performed x-ray diffraction and Raman spectroscopy measurements in the temperature range of 300-873 K on a single phase epitaxially oriented BaTiO3 thin film grown by pulsed laser deposition on a single crystal MgO substrate. The theta-2theta room temperature diffraction measurements and asymmetric rocking curves indicate that the film is very weakly tetragonal with the c-axis parallel to the plane of the film. X-ray diffraction measurements up to high temperature reveal only a change in slope in the perpendicular to the plane lattice parameter around 450 K (in bulk T-c=395 K) indicating that a diffuse-like of phase transition is taking place. Room temperature polarized Raman spectra show that the film is indeed tetragonal with C-4v symmetry and with the a-axis perpendicular to the film plane. Monitoring of the overdamped soft mode and the 308 cm(-1) mode confirms that the phase transition is taking place over a wide temperature range according to the x-ray results. The increase of the phase transition temperature is attributed to the stress effect induced by the substrate. (C) 2003 American Institute of Physics.
引用
收藏
页码:3307 / 3312
页数:6
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