Magnetic field dependence of the energy of negatively charged excitons in semiconductor quantum wells

被引:106
|
作者
Riva, C
Peeters, FM
Varga, K
机构
[1] Univ Instelling Antwerp, Dept Nat Kunde, B-2610 Antwerp, Belgium
[2] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
来源
PHYSICAL REVIEW B | 2001年 / 63卷 / 11期
关键词
D O I
10.1103/PhysRevB.63.115302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a variational calculation of the spin-singlet and spin-triplet states of a negatively charged exciton (trion) confined to a single quantum well in the presence of a perpendicular magnetic field. We calculated the probability density and the pair correlation function of the singlet and triplet trion states. The dependence of the energy levels and of the binding energy on the well width and on the magnetic field strength was investigated. We compared our results with the available experimental data on GaAs/AlGaAs quantum wells and find that in the low-magnetic-field region (B<18 T) the observed transitions are those of the singlet and the dark triplet trion (with angular momentum L-z= -1), while for high magnetic fields (B>25 T) the dark trion becomes optically inactive and possibly a transition to a bright triplet trion (angular momentum L-z=0) state is observed.
引用
收藏
页数:8
相关论文
共 50 条
  • [21] Binding energy of charged excitons in semiconductor quantum wells in the presence of longitudinal electric fields
    Dacal, LCO
    Brum, JA
    PHYSICAL REVIEW B, 2002, 65 (11) : 1 - 6
  • [22] Dynamics of charged excitons in GaAs quantum wells under high magnetic field
    Ciulin, V
    Finkelstein, G
    Haacke, S
    Ganière, JD
    Umansky, V
    Bar-Joseph, I
    Deveaud, B
    PHYSICA B-CONDENSED MATTER, 1998, 256 : 466 - 469
  • [23] Comparative study of the negatively and positively charged excitons in GaAs quantum wells
    Glasberg, S
    Finkelstein, G
    Shtrikman, H
    Bar-Joseph, I
    PHYSICAL REVIEW B, 1999, 59 (16) : 10425 - 10428
  • [24] Recombination dynamics of negatively charged excitons in gated GaAs quantum wells
    Ciulin, V
    Haacke, S
    Ganiere, JD
    Deveaud, B
    Finkelstein, G
    Umansky, V
    Bar-Joseph, I
    OPTICAL PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES, 2000, 81 : 169 - 172
  • [25] Creation and annihilation of negatively charged excitons in GaAs quantum wells.
    Buhmann, H
    Beton, PH
    Eaves, L
    Henini, M
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1995, 17 (11-12): : 1395 - 1400
  • [26] Dephasing of negatively charged excitons in ZnMgSe/ZnSe single quantum wells
    Tranitz, HP
    Schuster, R
    Wagner, HP
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 842 - 846
  • [27] Creation and annihilation of positively and negatively charged excitons in GaAs quantum wells
    Buhmann, H
    Beton, PH
    Eaves, L
    Henini, M
    SURFACE SCIENCE, 1996, 361 (1-3) : 447 - 450
  • [28] Negatively charged donors in semiconductor quantum wells in the presence of longitudinal magnetic and electric fields
    Dacal, LCO
    Brum, JA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (10) : 1101 - 1107
  • [29] Negatively charged exciton X- in quantum wells with strong magnetic field
    Wang, X
    Zheng, RS
    JOURNAL OF LUMINESCENCE, 1997, 72-4 : 408 - 410
  • [30] Interwell excitons in semimagnetic semiconductor double quantum wells in an external magnetic field
    A. V. Vertsimakha
    S. B. Lev
    V. I. Sugakov
    Physics of the Solid State, 2004, 46 : 948 - 953