Roughening and islanding of monolayer Ge coverage on vicinal Si(001) surface

被引：5
|
作者：
Guo, LW [2 ]
Lin, N
Huang, Q
Zhou, JM
Cue, N
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 1998年 / 126卷 / 3-4期
关键词：
strain; mismatch epitaxy; island; surface morphology; step-bunching;
D O I：
10.1016/S0169-4332(98)00006-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Roughening and islanding of monolayer Ce coverage on vicinal Si(001) surface has been studied using scanning tunneling microscope (STM). For a 3.9 degrees miscut surface, planar buckled-dimer surface is a metastable state limited by a barrier, which can be overcome by a 680 degrees C annealing. After the annealing, the metastable flat surface has been changed to a rough surface of small hills because of step-bunching, and on top of each hill, a 3 dimensional (3D) nanoscale island was observed. The mechanism of this roughening and islanding process have been discussed. (C) 1998 Elsevier Science B.V.
引用
收藏
页码：213 / 218
页数：6
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