The localization of localized electrochemical deposition (LECD) was investigated using the microanode-guided electroplating ( MAGE) technique. Two modes (i.e., one-step and intermittent-step) of the MAGE process were employed to explore the circular area around the bottom of the copper microcolumns deposited on a substrate. The diameter was utilized to estimate the localization occupied by the column instead of using the bottom area. For the hillocks deposited by one-step MAGE, the localization diameter increases with increasing the electric biases between the microanode and the substrate. For the copper microcolumns fabricated by intermittent-step MAGE, the localization diameter increases to a critical magnitude and levels off upon increasing the height of the columns. The critical localization diameter was found to be dependent on the electric biases and the initial gap between the microanode and the top of the microcolumn deposited earlier. The less the electric biases and the initial gap in intermittent MAGE, the smaller the localization diameter of the microcolumn. A model is proposed to illustrate the localization defined by one-step MAGE and the critical localization diameter (D-c) obtained from intermittent-step MAGE. A relationship between the ratio of the conical core strength to the conical periphery strength (i.e., E-core/E-p) and the electric bias has been established for the critical localization diameter of the microcolumns. The strength ratio can be used as a criterion to predict whether a localization diameter increases or not.
机构:
State Key Lab High Performance Complex Mfg, Changsha 410083, Peoples R China
Cent South Univ, Sch Mech & Elect Engn, Changsha 410083, Peoples R ChinaState Key Lab High Performance Complex Mfg, Changsha 410083, Peoples R China
Wang, Fuliang
Xiao, Hongbin
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State Key Lab High Performance Complex Mfg, Changsha 410083, Peoples R China
Cent South Univ, Sch Mech & Elect Engn, Changsha 410083, Peoples R ChinaState Key Lab High Performance Complex Mfg, Changsha 410083, Peoples R China
Xiao, Hongbin
He, Hu
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State Key Lab High Performance Complex Mfg, Changsha 410083, Peoples R China
Cent South Univ, Sch Mech & Elect Engn, Changsha 410083, Peoples R ChinaState Key Lab High Performance Complex Mfg, Changsha 410083, Peoples R China
机构:
Dongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South Korea
Konkuk Univ, Nanotechnol Res Ctr, Chungju 380701, South Korea
Konkuk Univ, Dept Appl Chem, Chungju 380701, South KoreaDongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South Korea
Lim, Seung-Lin
Kim, Jaecheon
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Dongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South KoreaDongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South Korea
Kim, Jaecheon
Park, Jongdeok
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Dongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South KoreaDongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South Korea
Park, Jongdeok
Kim, Sohee
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Konkuk Univ, Nanotechnol Res Ctr, Chungju 380701, South Korea
Konkuk Univ, Dept Appl Chem, Chungju 380701, South KoreaDongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South Korea
Kim, Sohee
Lee, Jae-Joon
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Dongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South KoreaDongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South Korea
机构:
Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Wang, M
Zhong, S
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机构:Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Zhong, S
Yin, XB
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机构:Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Yin, XB
Zhu, JM
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机构:Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Zhu, JM
Peng, RW
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机构:Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Peng, RW
Wang, Y
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机构:Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Wang, Y
Zhang, KQ
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机构:Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Zhang, KQ
Ming, NB
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机构:Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China