Tubular structures of silicon -: art. no. 193409

被引:145
|
作者
Seifert, G [1 ]
Köhler, T
Urbassek, HM
Hernández, E
Frauenheim, T
机构
[1] Univ Gesamthsch Paderborn, D-33098 Paderborn, Germany
[2] Univ Kaiserslautern, Fachbereich Phys, D-67663 Kaiserslautern, Germany
[3] Univ Autonoma Barcelona, Inst Ciencia Mat Barcelona, E-08193 Barcelona, Spain
来源
PHYSICAL REVIEW B | 2001年 / 63卷 / 19期
关键词
D O I
10.1103/PhysRevB.63.193409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we demonstrate, using density-functional tight-binding theory, that certain classes of silicon-based tubular nanostructures are stable and energetically viable. Specifically, we consider silicide and SiH nanotubes. The structures adopted by these nanotubes are very similar to those of previously reported phosphorus nanotubes. As in that case, the Si-based nanotubes have a semiconducting gap, which in contrast to carbon nanotubes is largely independent of the tube diameter and chirality. We further report on the mechanical properties of the Si-based nanotubes and suggest possible routes towards their synthesis.
引用
收藏
页数:4
相关论文
共 50 条
  • [21] Form birefringence of anisotropically nanostructured silicon -: art. no. 195304
    Künzner, N
    Diener, J
    Gross, E
    Kovalev, D
    Timoshenko, VY
    Fujii, M
    PHYSICAL REVIEW B, 2005, 71 (19):
  • [22] Formation of atom wires on vicinal silicon -: art. no. 126106
    González, C
    Snijders, PC
    Ortega, J
    Pérez, R
    Flores, F
    Rogge, S
    Weitering, HH
    PHYSICAL REVIEW LETTERS, 2004, 93 (12) : 126106 - 1
  • [23] Chemisorption energy of hydrogen on silicon surfaces -: art. no. 201303
    Raschke, MB
    Höfer, U
    PHYSICAL REVIEW B, 2001, 63 (20):
  • [24] Energy loss by keV ions in silicon - art. no. 212301
    Funsten, HO
    Ritzau, SM
    Harper, RW
    Borovsky, JE
    Johnson, RE
    PHYSICAL REVIEW LETTERS, 2004, 92 (21) : 213201 - 1
  • [25] SiOxFy passivation layer in silicon cryoetching -: art. no. 104901
    Mellhaoui, X
    Dussart, R
    Tillocher, T
    Lefaucheux, P
    Ranson, P
    Boufnichel, M
    Overzet, LJ
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (10)
  • [26] Silicon wafers for scanning helium microscopy - art. no. 693740
    Litwin, D.
    Galas, J.
    Sitarek, S.
    PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH-ENERGY PHYSICS EXPERIMENTS 2007, PTS 1 AND 2, 2007, 6937 : 93740 - 93740
  • [27] Lattice distortion in nanostructured porous silicon -: art. no. 251921
    Pascual, L
    Martín-Palma, RJ
    Landa-Cánovas, AR
    Herrero, P
    Martínez-Duart, JM
    APPLIED PHYSICS LETTERS, 2005, 87 (25) : 1 - 3
  • [28] Carbon-tin defects in silicon - art. no. 125212
    Lavrov, EV
    Fanciulli, M
    Kaukonen, M
    Jones, R
    Briddon, PR
    PHYSICAL REVIEW B, 2001, 64 (12)
  • [29] Silicon-on-insulator microdosimeter for radiobiology - art. no. 6445102
    Lim, W. H.
    Dzurak, A. S.
    Cornelius, I.
    Rosenfeld, A. B.
    Reinhard, M. I.
    Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, 2007, 6415 : 45102 - 45102
  • [30] Effect of backbond oxidation on silicon nanocrystallites -: art. no. 033311
    Ramos, LE
    Furthmüller, J
    Bechstedt, F
    PHYSICAL REVIEW B, 2004, 70 (03) : 033311 - 1