Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors

被引：2
|
作者：
Hwang, Jun Seok [1 ]
Bae, Hagyoul [1 ]
Lee, Jungmin [1 ]
Choi, Sung-Jin [1 ]
Kim, Dae Hwan [1 ]
Kim, Dong Myong [1 ]
机构：
[1] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
Interface traps; low temperature poly-silicon; modeling; optical response; thin-film transistors; sub-bandgap photon; BODY-FACTOR TECHNIQUE; DENSITY-OF-STATES; EXTRACTION; TFTS;
D O I：
10.1109/LED.2015.2406700
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sub-bandgap (E-ph < E-g) photonic capacitancevoltage method (PCVM) is proposed for the energy distribution [D-it(E)] of interface traps at the SiO2/low temperature poly-silicon (LTPS) junction interface in LTPS thin-film transistors (TFTs). The differential capacitance-voltage (C-V) characteristics under dark and sub-bandgap photoillumination are obtained by excitation of electrons from the valence band to the empty interface states over the photoresponsive range (E-F <= E-t <= E-V + E-ph) while suppressing the band-to-band electron-hole-pair generation. We applied the sub-bandgap PCVM technique to accumulation mode p-channel LTPS TFTs with W/L = 3/30 mu m/mu m. Extracted interface trap density ranges D-it(E) = 10(10)-10(11) cm(-2)eV(-1) over the bandgap.
引用
收藏
页码：339 / 341
页数：3
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