Increasing the fracture toughness of silicon by ion implantation

被引：16
|
作者：
Swadener, JG [1 ]
Nastasi, M [1 ]
机构：
[1] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 206卷
关键词：
fracture mechanics; implantation; radiation effects; silicon;
D O I：
10.1016/S0168-583X(03)00865-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Previous studies have shown that moderate doses of radiation can lead to increased fracture toughness in ceramics. An experimental investigation was conducted to determine the effects of ion implantation on fracture toughness in silicon. Specimens implanted with Ne showed increased fracture toughness, over the entire range of implantations tested. Using ions of various energies to better distribute implantation damage further increased the fracture toughness even though the region of amorphous damage was slightly decreased. The implantation damage accumulated in a predictable manner so that fracture toughness could be optimized. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：937 / 940
页数：4
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