Photon recycling white light emitting diode based on InGaN multiple quantum well heterostructure

被引：1
|
作者：
Nikolaev, VV
Portnoi, ME
Eliashevich, I
机构：
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] GELcore LLC, Somerset, NJ 08873 USA
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 183卷 / 01期
关键词：
Indium gallium nitride - Photon recycling white light emitting diode;
D O I：
10.1002/1521-396X(200101)183:1<177::AID-PSSA177>3.0.CO;2-H
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A numerical method based on the transfer matrix technique is developed to calculate the luminescence spectra of complex layered structures with photon recycling. Using this method we show a strong dependence of the emission spectra on the optical eigenmode structure of the device. The enhancement of the photon recycling and the LED external efficiency can be achieved by placing the active regions inside single or coupled microcavities.
引用
收藏
页码：177 / 182
页数：6
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