Preparation and properties of (Pb, La)(Zr,Ti)O3 ferroelectric thin films for electro-optic applications

被引：4
|
作者：
Wang, DY [1 ]
Wang, J
Chan, HLW
Choy, CL
机构：
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China
来源：
FERROELECTRICS | 2005年 / 328卷
关键词：
PLZT; sol-gel; optical band gap energy; electro-optic;
D O I：
10.1080/00150190500310617
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferroelectric lead lanthanum zirconate titanate (PLZT 9/65/35) thin films were deposited on single crystal MgO (001) and fused silica substrates using a sol-gel method. A pure perovskite phase can be achieved in the thin films by post-annealing the thin films at 680 degrees C for 10 min in an oxygen atmosphere using a rapid thermal processor (RTP). Optical properties of PLZT (9/65/35) thin films including optical transmittance, band gap energy and electro-optic (E-O) coefficients were measured. The thin films are highly transparent in the visible region. Relatively large quadratic E-O effects are exhibited by the thin films. In comparison, PLZT thin film grown on MgO (001) substrate has better optical properties and a higher quadratic E-O coefficient of 0.525 x 10(-17) m(2)/V-2.
引用
收藏
页码：3 / 7
页数：5
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