A vapor phase clean to remove sodium using 1,1,1,5,5,5-hexafluoro-2,4-pentanedione

被引：0

作者：

Beck, SE ^{[1
]}

Robertson, EA ^{[1
]}

George, MA ^{[1
]}

Bohling, DA ^{[1
]}

Moniot, DA ^{[1
]}

Waskiewicz, JL ^{[1
]}

Young, KM ^{[1
]}

机构：

[1] Air Prod & Chem Inc, Allentown, PA 18195 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1998年 / 1卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Sodium is removed from silicon wafer surfaces by a vapor phase method utilizing the chelation compound 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (H+ hfac). At a total pressure of 7.6 Torr, sodium is removed from the wafer surface at temperatures above 190 degrees C. Several mechanisms may play a role in the reaction of H+ hfac with surface sodium species. (C) Air Products and Chemicals, Inc. - 1998.

引用

页码：235 / 237

页数：3

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