A vapor phase clean to remove sodium using 1,1,1,5,5,5-hexafluoro-2,4-pentanedione

被引：0
|
作者：
Beck, SE [1 ]
Robertson, EA [1 ]
George, MA [1 ]
Bohling, DA [1 ]
Moniot, DA [1 ]
Waskiewicz, JL [1 ]
Young, KM [1 ]
机构：
[1] Air Prod & Chem Inc, Allentown, PA 18195 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 1998年 / 1卷 / 05期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Sodium is removed from silicon wafer surfaces by a vapor phase method utilizing the chelation compound 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (H+ hfac). At a total pressure of 7.6 Torr, sodium is removed from the wafer surface at temperatures above 190 degrees C. Several mechanisms may play a role in the reaction of H+ hfac with surface sodium species. (C) Air Products and Chemicals, Inc. - 1998.
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页码：235 / 237
页数：3
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