Solution concentration dependent properties of spray deposited Sb2S3 thin films

Semiconducting Sb2S3 thin films have been deposited onto amorphous glass substrates at optimised substrate temperature and concentration of complexing agent (tartaric acid) by a spray pyrolysis technique. The solution concentration of the reactants is varied from 0.025M, in steps of 0.025M, to 0.15M. The thickness of the. films is found in the order of 0.1 mu m. rt has also been found that, the film thickness is relatively higher for the film deposited using 0.075M solution concentration than the films deposited using other solution concentrations. X-ray diffraction studies reveal that the as deposited films are amorphous in nature. Room temperature electrical resistivity has been found to be of the order of 10(6) Ohm-cm and is relatively higher for the film deposited using 0.075M solution concentration. Optical absorption studies reveal that the optical gap of Sb2S3, irrespective of the solution concentration, remains same to be 1.1 eV. Relatively higher Thermoelectric Power (similar to 10 mu V/degrees C) and lower mobility have been observed for the film deposited with 0.075M solution concentration.