Effect of carbon doping on magnetic properties of Mn/Si interface

被引：1
|
作者：
Grebenyuk, G. S. [1 ]
Gomounova, M. V. [1 ]
Pronin, I. I. [1 ,2 ]
Senkovskiy, B. V. [3 ]
Vyalikh, D. V. [3 ]
机构：
[1] Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] ITMO Univ, St Petersburg 197101, Russia
[3] Tech Univ Dresden, Inst Festkorperphys, D-01069 Dresden, Germany
来源：
2ND INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SPBOPEN2015) | 2015年 / 643卷
关键词：
3P CORE-LEVEL; FILMS; PHOTOEMISSION; DICHROISM; GROWTH;
D O I：
10.1088/1742-6596/643/1/012096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-resolution photoelectron spectroscopy with synchrotron radiation and magnetic linear dichroism in Mn 3p core-level photoemission has been used to study the effect of carbon-doping on the initial stages of Mn/Si interface formation and its ferromagnetic ordering. It is shown that the manganese deposition on Si(100)2x1 surface with and without carbon doping results in the formation of the interfacial MnSi silicide and the solid solution of silicon in manganese. The Mn film covered with segregated Si begins to grow on the samples surface at coverage of 9 angstrom of Mn. It is shown that in-plane ferromagnetic ordering of the interfaces arises after of 2-4 angstrom Mn in both systems, however, the remanent magnetization of Mn-C/Si is higher than that of Mn/Si.
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页数：5
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