Photoluminescence from porous structures prepared by anodization of annealed Cz-Si

被引：0
|
作者：
Surma, B
Wnuk, A
Misiuk, A
Brzozowski, A
Pawlowska, M
Franz, M
Jun, J
Rozental, M
Nossarzewska-Orlowska, E
机构：
[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[3] Inst Halbleiterphys, Frankfurt, Germany
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1999年 / 34卷 / 5-6期
关键词：
porous silicon; oxygen precipitation; high pressure; photoluminescence; defects;
D O I：
10.1002/(SICI)1521-4079(199906)34:5/6<689::AID-CRAT689>3.0.CO;2-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The process of porous silicon, preparation from p-type Czochralski grown silicon,CZ-Si, subjected to different preanneal proceses was studied. It was found that defects generated by oxygen precipitation in the Ct-Si substrates can markedly influence the porous silicon preparation. Enhanced hydrostatic pressure of gas ambient during annealing of Ct-Si at 1350 degrees C leads to the generation of some extended defects in Ct-Si which affect photoluminescence from porous silicon obtained from such substrates. A relation between the concentration of defects in the Ct-Si substrates and the porous silicon structure and its photoluminescence was observed. Dependence of photoluminescence and porous silicon structure on the kind and concentration of oxygen related defects in the Ct-Si substrate was found.
引用
收藏
页码：689 / 697
页数：9
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