ANALYTIC MODEL FOR SUBTHRESHOLD CHANNEL POTENTIAL AND THRESHOLD VOLTAGE OF THE SCHOTTKY-BARRIER SURROUNDING-GATE MOSFETS

被引：0

作者：

Hu, Guang-Xi ^{[1
,2
]}

Hu, Shu-Yan ^{[1
,2
]}

Li, Pei-Cheng ^{[1
,2
]}

Liu, Ran ^{[1
,2
]}

Wang, Ling-Li ^{[1
,2
]}

Zhou, Xing ^{[3
]}

机构：

[1] Fudan Univ, ASIC, Shanghai 200433, Peoples R China

[2] Fudan Univ, Syst State Key Lab, Sch Informat Sci & Technol, Shanghai 200433, Peoples R China

[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

SOURCE/DRAIN; TRANSPORT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold voltage, V-th, of a surrounding-gate (SG) Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. An analytical expression for surface potential is obtained by solving Poisson's equation. Based on the potential model, an analytical expression for V-th is achieved, with quantum mechanical effects and SB lowering effect included. It is found that V-th will be raised by quantum mechanical effects and lowered by SB lowering effect. It is also found that, the influence of channel length on V-th is complicated; when the channel length is 20 nm, V-th is the smallest.

引用

页数：3

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