Edge-defined film-fed growth of Yb:YVO4 single crystals:: approaches to produce a few crystals simultaneously

被引：0
|
作者：
Kochurikhin, VV
Borisova, AE
Ivanov, MA
Shukshin, VE
Ushakov, SN
Suh, SJ
Yoon, DH
机构：
[1] Inst Gen Phys, Moscow 119991, Russia
[2] Sungkyunkwan Univ, Dept Adv Mat Engn, Suwon 440746, South Korea
来源：
JOURNAL OF CERAMIC PROCESSING RESEARCH | 2003年 / 4卷 / 03期
关键词：
edge defined film-fed growth; vanadates; rare-earth;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The applicability of the EFG technique of yttrium orthovanadate was confirmed by successful growth of a few single crystals simultaneously. Yb-doped single crystals with a content of Yb3+ ions of 10 atomic % in the starting melt were grown by the EFG technique with a length up to 50 mm as 4 items simultaneously. Good homogeneity was observed for Yb-doped crystals. The segregation coefficient of Yb3+ ions was very close to unity. Absorption and photoluminescence (PL) spectra of grown crystals were measured.
引用
收藏
页码：109 / 111
页数：3
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