The bolometric characteristic of thermally oxidized thin nickel film for an uncooled infrared image sensor

被引：6

作者：

Kim, Dong Soo ^{[1
]}

Kwon, Il Woong ^{[1
]}

Lee, Yong Soo ^{[2
]}

Lee, Hee Chul ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Div Elect Engn, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South Korea

来源：

INFRARED PHYSICS & TECHNOLOGY | 2011年 / 54卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Bolometric material; Micro-bolometer; Nickel oxide; TCR;

D O I：

10.1016/j.infrared.2010.10.001

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The resistivity of nano-scaled thin nickel film can be controlled so as to be applicable to MEMS-based micro-bolometric infrared image sensor technology. DC-sputtered 60 nm-thick thin nickel film on a SiO(2)/Si substrate was oxidized in O(2) ambient. From XRD and electrical analyses, a phase transformation from the metallic nickel film to crystalline nickel oxide films was verified. The thin oxidized nickel films showed a negative TCR (temperature coefficient of resistance (above -3.22%/degrees C)) which is indicative of a semiconductor behavior. A 1/f noise result ranging from 1 Hz to 100 Hz was also acquired. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：10 / 12

页数：3

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