Fullerene onion formation by carbon-ion implantation into copper

被引：18
|
作者：
Cabioch, T [1 ]
Riviere, JP [1 ]
Jaouen, M [1 ]
Delafond, J [1 ]
Denanot, MF [1 ]
机构：
[1] FAC SCI POITIERS,MET PHYS LAB,CNRS,URA 131,F-86022 POITIERS,FRANCE
来源：
SYNTHETIC METALS | 1996年 / 77卷 / 1-3期
关键词：
fullerene; copper; implantation;
D O I：
10.1016/0379-6779(96)80098-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have performed high-dose carbon-ion implantations into copper substrates at high temperature with the objective of producing single crystalline diamond thin films. An important density of giant carbon onions has been identified in a turbostratic graphite layer formed on the copper surface. We have characterized these giant fullerenes (up to 1 mu m in diameter) by transmission electron microscopy (TEM), high-resolution TEM (HRTEM) and electron energy loss spectroscopy (EELS), and we propose two possible mechanisms of formation of the carbon onions during the implantation process.
引用
收藏
页码：253 / 256
页数：4
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