Fullerene onion formation by carbon-ion implantation into copper

被引：18

作者：

Cabioch, T ^{[1
]}

Riviere, JP ^{[1
]}

Jaouen, M ^{[1
]}

Delafond, J ^{[1
]}

Denanot, MF ^{[1
]}

机构：

[1] FAC SCI POITIERS,MET PHYS LAB,CNRS,URA 131,F-86022 POITIERS,FRANCE

来源：

SYNTHETIC METALS | 1996年 / 77卷 / 1-3期

关键词：

fullerene; copper; implantation;

D O I：

10.1016/0379-6779(96)80098-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed high-dose carbon-ion implantations into copper substrates at high temperature with the objective of producing single crystalline diamond thin films. An important density of giant carbon onions has been identified in a turbostratic graphite layer formed on the copper surface. We have characterized these giant fullerenes (up to 1 mu m in diameter) by transmission electron microscopy (TEM), high-resolution TEM (HRTEM) and electron energy loss spectroscopy (EELS), and we propose two possible mechanisms of formation of the carbon onions during the implantation process.

引用

页码：253 / 256

页数：4

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