Carbon doping effects on the electronic structure of boron nitride

被引:3
|
作者
Zhang, HF
Wang, CY
Duan, WH
Fang, RC
机构
[1] CENT IRON & STEEL RES INST,BEIJING 100081,PEOPLES R CHINA
[2] TSING HUA UNIV,DEPT PHYS,BEIJING 100080,PEOPLES R CHINA
[3] UNIV SCI & TECHNOL CHINA,DEPT PHYS,HEFEI 230026,PEOPLES R CHINA
关键词
electronic structure; doping effect; LMTO method; BN system;
D O I
10.4028/www.scientific.net/DDF.152.19
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of three series of cubic BN systems are studied by using the linear combination muffin-tin orbitals method with atomic sphere approximation It is shown from the calculations that C atom is a donor in the interstitial and B atom sites, while it is an acceptor in the N atom site. At the different concentration of C atom in the systems, it is possible that the C atom can occupy either the acceptor site or the donor sites at the same time, which is the real reason for one c-BN system simultaneous exhibits n- and p-type conductivities. The density of states of C atoms in different sites are totally different, and the C atom affects more on the density of states of it's neighbor atoms, which reflect the different atomic interaction characteristics between the impurity C atoms and the host atoms.
引用
收藏
页码:19 / 26
页数:8
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