A two-dimensional arsenene/g-C3N4 van der Waals heterostructure: a highly efficient photocatalyst for water splitting

被引:25
|
作者
Li, Xiao-Hua [1 ]
Wang, Bao-Ji [1 ]
Wang, Guo-Dong [1 ]
Yang, Xue-Feng [1 ]
Zhao, Rui-Qi [2 ]
Jia, Xing-Tao [1 ]
Ke, San-Huang [3 ]
机构
[1] Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454000, Henan, Peoples R China
[2] Henan Polytech Univ, Sch Mat Sci & Engn, Jiaozuo 454000, Henan, Peoples R China
[3] Tongji Univ, Sch Phys Sci & Engn, MOE Key Lab Microstruct Mat, Shanghai 200092, Peoples R China
基金
中国国家自然科学基金;
关键词
GRAPHITIC CARBON NITRIDE; GENERALIZED GRADIENT APPROXIMATION; ELECTRONIC-PROPERTIES; SEMICONDUCTOR; PHOTOVOLTAICS; DESIGN; ORIGIN; RANGE;
D O I
10.1039/d1se00313e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Producing hydrogen through photocatalytic water splitting is a feasible and efficient route for resolving the problems associated with energy and the environment, and great efforts have been devoted to improving solar-to-hydrogen (STH) efficiency. Here, we study an arsenene/g-C3N4 van der Waals heterostructure as a possible photocatalyst for water splitting. Using first principles calculations, we find that the heterostructure is an indirect-gap semiconductor with a type-II band alignment and low exciton binding energy, facilitating the effective separation of photogenerated electrons and holes. Comparing the band edge positions with the redox potentials of water demonstrates that the heterostructure is a potential photocatalyst for water splitting in a neutral environment. Meanwhile, the heterostructure shows significantly enhanced optical absorption beyond the constituent monolayers in both visible and ultraviolet regions. Its STH efficiency limit can reach up to 15.8%, which is quite promising for commercial applications. Thermodynamic analyses for redox reactions suggest facile hydrogen generation on the heterostructure. These extraordinary properties enable the arsenene/g-C3N4 heterostructure to be a promising water-splitting photocatalyst.
引用
收藏
页码:2249 / 2256
页数:8
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