Purification and growth of PbI2 crystals:: Dependence of the radiation response on the PbI2 crystal purity

被引:26
|
作者
Oliveira, IB
Costa, FE
Armelin, MJ
Cardoso, LP
Hamada, MM
机构
[1] IPEN CNEN SP, BR-05508900 Sao Paulo, Brazil
[2] UNICAMP, IFGW, BR-13083970 Campinas, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
crystal growth; lead iodide crystal; semiconductor radiation detector; zone refine;
D O I
10.1109/TNS.2002.801483
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Lead iodide starting materials have been purified by a multipass; zone refining process. The effectiveness of the purification method on the material purity was determined by neutron activation analysis after three different purification passes numbers. A significant decrease of the impurities concentration was observed in function of the passes number. The purest material of the zone refined ingots, middle section, was used for crystal growth by Bridgman method. The results of the dark leakage current, the resistivity, and the response of the alpha and gamma radiations were strongly dependent on the purity of the crystal.
引用
收藏
页码:1968 / 1973
页数:6
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