Optical and electrical properties of thermally co-evaporated SnS1-xSex alloy films

被引：7
|
作者：
Saritha, K. [1 ]
Rasool, S. [1 ]
Reddy, K. T. Ramakrishna [1 ]
Tivanov, M. S. [2 ]
Saad, A. M. [3 ]
Trofimova, A., V [2 ]
Gremenok, V. F. [4 ]
机构：
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[2] Belarusian State Univ, Fac Phys, Minsk 220030, BELARUS
[3] Al Balqa Appl Univ, Salt 19117, Jordan
[4] Natl Acad Sci, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS
来源：
MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 10期
关键词：
SnS1-xSex thin films; thermal co-evaporation; band gap energy; Urbach energy; resistivity; photosensitivity; THIN-FILM; LAYER;
D O I：
10.1088/2053-1591/ab4078
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The paper presents studies of optical and electrical properties of SnS1-xSex (x = 0.26-0.31) thin films deposited on glass substrates using thermal co-evaporation technique at different substrate temperatures, 200 degrees C-350 degrees C. The as-deposited films were characterized by the energy dispersive spectroscopy, X-ray diffractometry, scanning electron microscopy, optical transmission and reflection spectroscopy, four-probe resistivity and photoconductance measurements. The results have shown that deposited films can be used as absorber layers in thin film solar cell applications, and the optimal substrate temperature for the deposition is 300 degrees C.
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页数：10
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